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| Datasheet File OCR Text: |
| NPN SILICON PLANAR MEDIUM POWER DARLINGTON TRANSISTOR ISSUE 1 SEPT 93 FEATURES * 120 Volt VCEO * Gain of 2K at IC=1 Amp * Ptot= 1 Watt APPLICATIONS * Lamp, solenoid and relay drivers * Replacement of TO126 and TO220 packages REFER TO ZTX605 FOR GRAPHS FXT605 B C E ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb = 25C Operating and Storage Temperature Range PARAMETER SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO MIN. 140 120 10 0.01 10 0.1 10 1.0 1.5 1.8 1.7 2000 5000 2000 500 150 SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg TYP. MAX. E-Line TO92 Compatible VALUE 140 120 10 4 1 1 -55 to +200 UNIT CONDITIONS. UNIT V V V A A W C ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-Off Current Colllector-Emitter Cut-Off Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage V V V A A A A IC=100A, IE=0 IC=10mA, IB=0* IE=100A, IC=0 VCB=120V, IE=0 VCB=120V,T amb =100C VEB=8V, IC=0 VCES=120V IC=0.25A, IB=0.25mA* IC=1A, IB=1mA* IC=1A, IB=1mA* IC=1A, VCE=5V* IC=50mA, VCE=5V* IC=500mA, VCE=5V* IC=1A, VCE=5V* IC=2A, VCE=5V* Emitter Cut-Off Current IEBO ICES VCE(sat) VBE(sat) VBE(on) V V V V Static Forward Current hFE Transfer Ratio Transition Frequency fT 100K MHz IC=100mA, VCE=10V f=20MHz * Measured under pulse conditions. Pulse width=300s. Duty cycle 2% 3-44 |
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